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d a t a sh eet product speci?cation file under integrated circuits, ic06 september 1993 integrated circuits 74hc/hct4316 quad bilateral switches for a complete data sheet, please also download: the ic06 74hc/hct/hcu/hcmos logic family specifications the ic06 74hc/hct/hcu/hcmos logic package information the ic06 74hc/hct/hcu/hcmos logic package outlines
september 1993 2 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 features low on resistance: 160 w (typ.) at v cc - v ee = 4.5 v 120 w (typ.) at v cc - v ee = 6.0 v 80 w (typ.) at v cc - v ee = 9.0 v logic level translation: to enable 5 v logic to communicate with 5 v analog signals typical break before make built in output capability: non-standard i cc category: msi general description the 74hc/hct4316 are high-speed si-gate cmos devices. they are specified in compliance with jedec standard no. 7a. the 74hc/hct4316 have four independent analog switches. each switch has two input/output terminals (ny, nz) and an active high select input (ns). when the enable input ( e) is high, all four analog switches are turned off. current through a switch will not cause additional v cc current provided the voltage at the terminals of the switch is maintained within the supply voltage range; v cc >> (v y , v z ) >> v ee . inputs ny and nz are electrically equivalent terminals. v cc and gnd are the supply voltage pins for the digital control inputs ( e and ns). the v cc to gnd ranges are 2.0 to 10.0 v for hc and 4.5 to 5.5 v for hct. the analog inputs/outputs (ny and nz) can swing between v cc as a positive limit and v ee as a negative limit. v cc - v ee may not exceed 10.0 v. see the 4016 for the version without logic level translation. quick reference data v ee = gnd = 0 v; t amb =25 c; t r =t f = 6 ns symbol parameter conditions typical unit hc hct t pzh turn on time c l = 15 pf; r l =1 k w ; v cc =5 v e to v os 19 19 ns ns to v os 16 17 ns t pzl turn on time e to v os 19 24 ns ns to v os 16 21 ns t phz / t plz turn off time e to v os 20 21 ns ns to v os 16 19 ns c i input capacitance 3.5 3.5 pf c pd power dissipation capacitance per switch notes 1 and 2 13 14 pf c s max. switch capacitance 5 5 pf notes 1. c pd is used to determine the dynamic power dissipation (p d in m w): p d =c pd v cc 2 f i +? {(c l + c s ) v cc 2 f o } where: f i = input frequency in mhz f o = output frequency in mhz ? {(c l + c s ) v cc 2 f o } = sum of outputs c l = output load capacitance in pf c s = max. switch capacitance in pf v cc = supply voltage in v 2. for hc the condition is v i = gnd to v cc for hct the condition is v i = gnd to v cc - 1.5 v
september 1993 3 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 ordering information see 74hc/hct/hcu/hcmos logic package information . pin description pin no. symbol name and function 1, 4, 10, 13 1z to 4z independent inputs/outputs 2, 3, 11, 12 1y to 4y independent inputs/outputs 7 e enable input (active low) 8 gnd ground (0 v) 9v ee negative supply voltage 15, 5, 6, 14 1s to 4s select inputs (active high) 16 v cc positive supply voltage fig.1 pin configuration. fig.2 logic symbol. fig.3 iec logic symbol. (b)
september 1993 4 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 function table note 1. h = high voltage level l = low voltage level x = dont care applications signal gating modulation demodulation chopper inputs switch ens l l l h off on h x off fig.4 functional diagram. fig.5 schematic diagram (one switch).
september 1993 5 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 ratings limiting values in accordance with the absolute maximum system (iec 134) voltages are referenced to v ee = gnd (ground = 0 v) note to ratings to avoid drawing v cc current out of terminal z, when switch current flows in terminals y n , the voltage drop across the bidirectional switch must not exceed 0.4 v. if the switch current flows into terminals z, no v cc current will flow out of terminal y n . in this case there is no limit for the voltage drop across the switch, but the voltages at y n and z may not exceed v cc or v ee . recommended operating conditions symbol parameter min. max. unit conditions v cc dc supply voltage - 0.5 + 11.0 v i ik dc digital input diode current 20 ma for v i <- 0.5 v or v i > v cc + 0.5 v i sk dc switch diode current 20 ma for v s <- 0.5 v or v s > v cc + 0.5 v i s dc switch current 25 ma for - 0.5 v < v s < v cc + 0.5 v i ee dc v ee current 20 ma i cc ; i gnd dc v cc or gnd current 50 ma t stg storage temperature range - 65 + 150 c p tot power dissipation per package for temperature range: - 40 to + 125 c 74hc/hct plastic dil 750 mw above + 70 c: derate linearly with 12 mw/k plastic mini-pack (so) 500 mw above + 70 c: derate linearly with 8 mw/k p s power dissipation per switch 100 mw symbol parameter 74hc 74hct unit conditions min. typ. max. min. typ. max. v cc dc supply voltage v cc - gnd 2.0 5.0 10.0 4.5 5.0 5.5 v see figs 6 and 7 v cc dc supply voltage v cc - v ee 2.0 5.0 10.0 2.0 5.0 10.0 v see figs 6 and 7 v i dc input voltage range gnd v cc gnd v cc v v s dc switch voltage range v ee v cc v ee v cc v t amb operating ambient temperature range - 40 + 85 - 40 + 85 c see dc and ac characteristics t amb operating ambient temperature range - 40 + 125 - 40 + 125 c t r , t f input rise and fall times 6.0 1000 500 400 250 6.0 500 ns v cc = 2.0 v v cc = 4.5 v v cc = 6.0 v v cc = 10.0 v
september 1993 6 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 fig.6 guaranteed operating area as a function of the supply voltages for 74hc4316. fig.7 guaranteed operating area as a function of the supply voltages for 74hct4316. dc characteristics for 74hc/hct for 74hc: v cc - gnd or v cc - v ee = 2.0, 4.5, 6.0 and 9.0 v for 74hct: v cc - gnd = 4.5 and 5.5 v; v cc - v ee = 2.0, 4.5, 6.0 and 9.0 v notes 1. at supply voltages (v cc - v ee ) approaching 2.0 v the analog switch on-resistance becomes extremely non-linear. therefore it is recommended that these devices are used to transmit digital signals only, when using these supply voltages. 2. for test circuit measuring r on see fig.8. symbol parameter t amb ( c) unit test conditions 74hc/hct v cc (v) v ee (v) i s ( m a) v is v i + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. r on on resistance (peak) - 160 120 85 - 320 240 170 - 400 300 215 - 480 360 255 w w w w 2.0 4.5 6.0 4.5 0 0 0 - 4.5 100 1000 1000 1000 v cc to v ee v ih or v il r on on resistance (rail) 160 80 70 60 - 160 140 120 - 200 175 150 - 240 210 180 w w w w 2.0 4.5 6.0 4.5 0 0 0 - 4.5 100 1000 1000 1000 v ee v ih or v il r on on resistance (rail) 170 90 80 65 - 180 160 135 - 225 200 170 - 270 240 205 w w w w 2.0 4.5 6.0 4.5 0 0 0 - 4.5 100 1000 1000 1000 v cc v ih or v il d r on maximum d on resistance between any two channels - 16 9 6 w w w w 2.0 4.5 6.0 4.5 0 0 0 - 4.5 v cc to v ee v h or v il
september 1993 7 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 dc characteristics for 74hc voltages are referenced to gnd (ground = 0 v) symbol parameter t amb ( c) unit test conditions 74hc v cc (v) v ee (v) v i other + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. v ih high level input voltage 1.5 3.15 4.2 6.3 1.2 2.4 3.2 4.3 1.5 3.15 4.2 6.3 1.5 3.15 4.2 6.3 v 2.0 4.5 6.0 9.0 v il low level input voltage 0.8 2.1 2.8 4.3 0.5 1.35 1.8 2.7 0.5 1.35 1.8 2.7 0.5 1.35 1.8 2.7 v 2.0 4.5 6.0 9.0 i i i nput leakage current 0.1 0.2 1.0 2.0 1.0 2.0 m a 6.0 10.0 0 0 v cc or gnd i s analog switch off-state current 0.1 1.0 1.0 m a 10.0 0 v ih or v il v s ? = v cc - v ee (see fig.10) i s analog switch on-state current 0.1 1.0 1.0 m a 10.0 0 v ih or v il v s ? = v cc - v ee (see fig.11) i cc quiescent supply current 8.0 16.0 80.0 160.0 160.0 320.0 m a 6.0 10.0 0 0 v cc or gnd v is =v ee or v cc ; v os =v cc or v ee
september 1993 8 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 ac characteristics for 74hc gnd = 0 v; t r =t f = 6 ns; c l = 50 pf symbol parameter t amb ( c) unit test conditions 74hc v cc (v) v ee (v) other + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. t phl / t plh propagation delay v is to v os 17 6 5 4 60 12 10 8 75 15 13 10 90 18 15 12 ns 2.0 4.5 6.0 4.5 0 0 0 - 4.5 r l = ; c l = 50 pf (see fig.18) t pzh / t pzl turn on time e to v os 61 22 18 19 205 41 35 37 255 51 43 47 310 62 53 56 ns 2.0 4.5 6.0 4.5 0 0 0 - 4.5 r l =1 k w ; c l = 50 pf (see figs 19, 20 and 21) t pzh / t pzl turn on time ns to v os 52 19 15 17 175 35 30 34 220 44 37 43 265 53 45 51 ns 2.0 4.5 6.0 4.5 0 0 0 - 4.5 r l =1 k w ; c l = 50 pf (see figs 19, 20 and 21) t phz / t plz turn off time e to v os 63 23 18 21 220 44 37 39 275 55 47 49 330 66 56 59 ns 2.0 4.5 6.0 4.5 0 0 0 - 4.5 r l =1 k w ; c l = 50 pf (see figs 19, 20 and 21) t phz / t plz turn off time ns to v os 55 20 16 18 175 35 30 36 220 44 37 45 265 53 45 54 ns 2.0 4.5 6.0 4.5 0 0 0 - 4.5 r l =1 k w ; c l = 50 pf (see figs 19, 20 and 21)
september 1993 9 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 dc characteristics for 74hct voltages are referenced to gnd (ground = 0) note 1. the value of additional quiescent supply current ( d i cc ) for a unit load of 1 is given here. to determine d i cc per input, multiply this value by the unit load coefficient shown in the table below. symbol parameter t amb ( c) unit test conditions 74hct v cc (v) v ee (v) v i other + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. v ih high level input voltage 2.0 1.6 2.0 2.0 v 4.5 to 5.5 v il low level input voltage 1.2 0.8 0.8 0.8 v 4.5 to 5.5 i i input leakage current 0.1 1.0 1.0 m a 5.5 0 v cc or gnd i s analog switch off-state current 0.1 1.0 1.0 m a 10.0 0v ih or v il v s ? = v cc - v ee (see fig.10) i s analog switch on-state current 0.1 1.0 1.0 m a 10.0 0v ih or v il v s ? = v cc - v ee (see fig.11) i cc quiescent supply current 8.0 16.0 80.0 160.0 160.0 320.0 m a 5.5 5.0 0 - 5.0 v cc or gnd v is =v ee or v cc ; v os =v cc or v ee d i cc additional quiescent supply current per input pin for unit load coef?cient is 1 (note 1) 100 360 450 490 m a 4.5 to 5.5 0 v cc - 2.1 v other inputs at v cc or gnd input unit load coefficient ns e 0.50 0.50
september 1993 10 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 fig.8 test circuit for measuring r on . fig.9 typical r on as a function of input voltage v is for v is = 0 to v cc - v ee . fig.10 test circuit for measuring off-state current. fig.11 test circuit for measuring on-state current.
september 1993 11 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 ac characteristics for 74hct gnd = 0 v; t r =t f = 6 ns; c l = 50 pf symbol parameter t amb ( c) unit test conditions 74hct v cc (v) v ee (v) other + 25 - 40 to + 85 - 40 to + 125 min. typ. max. min. max. min. max. t phl / t plh propagation delay v is to v os 6 4 12 8 15 10 18 12 ns 4.5 4.5 0 - 4.5 r l = ; c l = 50 pf (see fig.18) t pzh turn on time e to v os 22 21 44 42 55 53 66 63 ns 4.5 4.5 0 - 4.5 r l =1 k w ; c l = 50 pf (see figs 19, 20 and 21) t pzl turn on time e to v os 28 21 56 42 70 53 84 63 ns 4.5 4.5 0 - 4.5 t pzh turn on time ns to v os 20 17 40 34 53 43 60 51 ns 4.5 4.5 0 - 4.5 r l =1 k w ; c l = 50 pf (see figs 19, 20 and 21) t pzl turn on time ns to v os 25 17 50 34 63 43 75 51 ns 4.5 4.5 0 - 4.5 t phz / t plz turn off time e to v os 25 23 50 46 63 58 75 69 ns 4.5 4.5 0 - 4.5 r l =1 k w ; c l = 50 pf (see figs 19, 20 and 21) t phz / t plz turn off time ns to v os 22 20 44 40 55 50 66 60 ns 4.5 4.5 0 - 4.5 r l =1 k w ; c l = 50 pf (see figs 19, 20 and 21)
september 1993 12 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 additional ac characteristics for 74hc/hct recommended conditions and typical values gnd = 0 v; t amb =25 c notes 1. adjust input voltage v is to 0 dbm level (0 dbm = 1 mw into 600 w ). 2. adjust input voltage v is to 0 dbm level at v os for 1 mhz (0 dbm = 1 mw into 50 w ). general note v is is the input voltage at an ny or nz terminal, whichever is assigned as an input. v os is the output voltage at an ny or nz terminal, whichever is assigned as an output. symbol parameter typ. unit v cc (v) v ee (v) v is(p-p) (v) conditions sine-wave distortion f = 1 khz 0.80 0.40 % % 2.25 4.5 - 2.25 - 4.5 4.0 8.0 r l = 10 k w ; c l = 50 pf (see fig.14) sine-wave distortion f = 10 khz 2.40 1.20 % % 2.25 4.5 - 2.25 - 4.5 4.0 8.0 r l = 10 k w ; c l = 50 pf (see fig.14) switch off signal feed-through - 50 - 50 db db 2.25 4.5 - 2.25 - 4.5 note 1 r l = 600 w ; c l = 50 pf f = 1 mhz (see figs 12 and 15) crosstalk between any two switches - 60 - 60 db db 2.25 4.5 - 2.25 - 4.5 note 1 r l = 600 w ; c l = 50 pf; f = 1 mhz; (see fig.16) v (p-p) crosstalk voltage between control and any switch (peak-to-peak value) 110 220 mv mv 4.5 4.5 0 - 4.5 r l = 600 k w ; c l = 50 pf; f = 1 mhz ( e or ns, square-wave between v cc and gnd, t r =t f = 6 ns) (see fig.17) f max minimum frequency response ( - 3 db) 150 160 mhz mhz 2.25 4.5 - 2.25 - 4.5 note 2 r l =50 w ; c l = 10 pf (see figs 13 and 14) c s maximum switch capacitance 5 pf fig.12 typical switch off signal feed-through as a function of frequency. test conditions: v cc = 4.5 v; gnd = 0 v; v ee = - 4.5 v; r l =50 w ; r source =1 k w .
september 1993 13 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 fig.13 typical frequency response. test conditions: v cc = 4.5 v; gnd = 0 v; v ee = - 4.5 v; r l =50 w ; r source =1 k w . fig.14 test circuit for measuring sine-wave distortion and minimum frequency response. fig.15 test circuit for measuring switch off signal feed-through. fig.16 test circuit for measuring crosstalk between any two switches. (a) channel on condition; (b) channel off condition. fig.17 test circuit for measuring crosstalk between control and any switch. the crosstalk is defined as follows (oscilloscope output):
september 1993 14 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 ac waveforms fig.18 waveforms showing the input (v is ) to output (v os ) propagation delays. fig.19 waveforms showing the turn-on and turn-off times. (1) hc : v m = 50%; v i = gnd to v cc . hct : v m = 1.3 v; v i = gnd to 3 v.
september 1993 15 philips semiconductors product speci?cation quad bilateral switches 74hc/hct4316 test circuit and waveforms conditions definitions for figs 20 and 21: c l = load capacitance including jig and probe capacitance (see ac characteristics for values). r t = termination resistance should be equal to the output impedance z o of the pulse generator. t r =t f = 6 ns; when measuring f max , there is no constraint to t r , t f with 50% duty factor. package outlines see 74hc/hct/hcu/hcmos logic package outlines . test switch v is t pzh t pzl t phz t plz others v ee v cc v ee v cc open v cc v ee v cc v ee pulse family amplitude v m t r ; t f f max ; pulse width other 74hc v cc 50% < 2 ns 6 ns 74hct 3.0 v 1.3 v < 2 ns 6 ns fig.20 test circuit for measuring ac performance. fig.21 input pulse definitions.

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